CPV364M4K preliminary pd- 5.042 short circuit rated ultrafast igbt igbt sip module features description 3 6 71319 18 15 10 16 4 9 12 d1 d3 d5 d2 d4 d6 q1 q2 q3 q4 q5 q6 1 output current in a typical 20 khz motor drive product summary ? short circuit rated ultrafast: optimized for high operating frequencies >5.0 khz , and short circuit rated to 10s @ 125c, v ge = 15v ? fully isolated printed circuit board mount package ? switching-loss rating includes all "tail" losses ? hexfred tm soft ultrafast diodes ? optimized for high operating frequency (over 5khz) see fig. 1 for current vs. frequency curve 11 a rms per phase (3.1 kw total) with t c = 90c, t j = 125c, supply voltage 360vdc, power factor 0.8, modulation depth 115% (see figure 1) the igbt technology is the key to international rectifier's advanced line of ims (insulated metal substrate) power modules. these modules are more efficient than comparable bipolar transistor modules, while at the same time having the simpler gate-drive requirements of the familiar power mosfet. this superior technology has now been coupled to a state of the art materials system that maximizes power throughput with low thermal resistance. this package is highly suited to motor drive applications and where space is at a premium. 7/18/97 ims-2 absolute maximum ratings parameter max. units v ces collector-to-emitter voltage 600 v i c @ t c = 25c continuous collector current 24 i c @ t c = 100c continuous collector current 13 a i cm pulsed collector current ? 48 i lm clamped inductive load current ? 48 t sc short circuit withstand time 9.3 s v ge gate-to-emitter voltage 20 v v isol isolation voltage, any terminal to case, 1 min 2500 v rms p d @ t c = 25c maximum power dissipation, each igbt 63 w p d @ t c = 100c maximum power dissipation, each igbt 25 t j operating junction and -55 to +150 t stg storage temperature range c soldering temperature, for 10 sec. 300 (0.063 in. (1.6mm) from case) mounting torque, 6-32 or m3 screw. 5-7 lbf?in ( 0.55-0.8 n?m) parameter typ. max. units r q jc (igbt) junction-to-case, each igbt, one igbt in conduction CCC 2.0 r q jc (diode) junction-to-case, each diode, one diode in conduction CCC 3.0 c/w r q cs (module) case-to-sink, flat, greased surface 0.10 CCC wt weight of module 20 (0.7) CCC g (oz) thermal resistance
CPV364M4K parameter min. typ. max. units conditions v (br)ces collector-to-emitter breakdown voltage ? 600 CCC CCC v v ge = 0v, i c = 250a d v (br)ces / d t j temperature coeff. of breakdown voltage CCC 0.63 CCC v/c v ge = 0v, i c = 1.0ma v ce(on) collector-to-emitter saturation voltage CCC 1.80 2.3 i c = 13a v ge = 15v CCC 1.80 CCC v i c = 24a see fig. 2, 5 CCC 1.56 CCC i c = 13a, t j = 150c v ge(th) gate threshold voltage 3.0 CCC 6.0 v ce = v ge , i c = 250a d v ge(th) / d t j temperature coeff. of threshold voltage CCC -13 CCC mv/c v ce = v ge , i c = 250a g fe forward transconductance ? 11 18 CCC s v ce = 100v, i c = 10a i ces zero gate voltage collector current CCC CCC 250 a v ge = 0v, v ce = 600v CCC CCC 3500 v ge = 0v, v ce = 600v, t j = 150c v fm diode forward voltage drop CCC 1.3 1.7 v i c = 15a see fig. 13 CCC 1.2 1.6 i c = 15a, t j = 150c i ges gate-to-emitter leakage current CCC CCC 100 na v ge = 20v electrical characteristics @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions q g total gate charge (turn-on) 110 170 i c = 13a q ge gate - emitter charge (turn-on) 14 21 nc v cc = 400v see fig.8 q gc gate - collector charge (turn-on) 49 74 v ge = 15v t d(on) turn-on delay time 50 t r rise time 30 t j = 25c t d(off) turn-off delay time 110 170 i c = 13a, v cc = 480v t f fall time 91 140 v ge = 15v, r g = 10 w e on turn-on switching loss 0.56 energy losses include "tail" e off turn-off switching loss 0.28 mj and diode reverse recovery e ts total switching loss 0.84 1.1 see fig. 9,10, 18 t sc short circuit withstand time 10 s v cc = 360v, t j = 125c v ge = 15v, r g = 10 w , v cpk < 500v t d(on) turn-on delay time 47 t j = 150c, see fig. 11,18 t r rise time 30 i c = 13a, v cc = 480v t d(off) turn-off delay time 250 v ge = 15v, r g = 10 w t f fall time 150 energy losses include "tail" e ts total switching loss 1.28 mj and diode reverse recovery l e internal emitter inductance 7.5 nh measured 5mm from package c ies input capacitance 1600 v ge = 0v c oes output capacitance 130 pf v cc = 30v see fig. 7 c res reverse transfer capacitance 55 ? = 1.0mhz t rr diode reverse recovery time 42 60 ns t j = 25c see fig. 74 120 t j = 125c 14 i f = 15a i rr diode peak reverse recovery current 4.0 6.0 a t j = 25c see fig. 6.5 10 t j = 125c 15 v r = 200v q rr diode reverse recovery charge 80 180 nc t j = 25c see fig. 220 600 t j = 125c 16 di/dt = 200as di (rec)m /dt diode peak rate of fall of recovery 188 a/s t j = 25c see fig. during t b 160 t j = 125c 17 switching characteristics @ t j = 25c (unless otherwise specified) ns ns
CPV364M4K 0.1 1 10 100 0 2 4 6 8 10 12 14 16 18 f, frequency (khz) load current (a) fig. 1 - typical load current vs. frequency (load current = i rms of fundamental) tc = 90c tj = 125c power factor = 0.8 modulation d epth = 1.15 vcc = 50% of rated voltage 0.00 0.59 1.17 1.76 total output power (kw) 3.51 5.27 2.34 2.93 4.10 4.68 fig. 2 - typical output characteristics fig. 3 - typical transfer characteristics 1 10 100 1 10 v , collector-to-emitter voltage (v) i , collector-to-emitter current (a) ce c v = 15v 20s pulse width ge t = 25 c j t = 150 c j 1 10 100 5 6 7 8 9 10 v , gate-to-emitter voltage (v) i , collector-to-emitter current (a) ge c v = 50v 5s pulse width cc t = 25 c j t = 150 c j
CPV364M4K -60 -40 -20 0 20 40 60 80 100 120 140 160 1.0 2.0 3.0 4.0 t , junction temperature ( c) v , collector-to-emitter voltage(v) j ce v = 15v 80 us pulse width ge i = a 26 c i = a 13 c i = a 6.5 c fig. 4 - maximum collector current vs. case temperature fig. 6 - maximum igbt effective transient thermal impedance, junction-to-case 0 5 10 15 20 25 25 50 75 100 125 150 m a xim um d c collecto r c urre nt (a ) t , case temperature (c) c v = 1 5 v ge a 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 t , r e ctan gu la r p uls e d ura tio n (se c ) 1 thjc d = 0.50 0.01 0.02 0.05 0.10 0.20 s in gle pu lse (thermal response) thermal response (z ) p t 2 1 t dm notes: 1. d uty factor d = t / t 2. peak t = p x z + t 12 j dm thjc c fig. 5 - typical collector-to-emitter voltage vs. junction temperature
CPV364M4K fig. 7 - typical capacitance vs. collector-to-emitter voltage fig. 8 - typical gate charge vs. gate-to-emitter voltage fig. 9 - typical switching losses vs. gate resistance fig. 10 - typical switching losses vs. junction temperature 0 10 20 30 40 50 0.5 1.0 1.5 r , gate resistance (ohm) total switching losses (mj) g v = 480v v = 15v t = 25 c i = 13a cc ge j c r g , gate resistance ( w ) -60 -40 -20 0 20 40 60 80 100 120 140 160 0.1 1 10 t , junction temperature ( c ) total switching losses (mj) j r = ohm v = 15v v = 480v g ge cc i = a 26 c i = a 13 c i = a 6.5 c 10 w 0 20 40 60 80 100 120 0 4 8 12 16 20 q , total gate charge (nc) v , gate-to-emitter voltage (v) g ge v = 400v i = 13a cc c 1 10 100 0 500 1000 1500 2000 2500 3000 v , collector-to-emitter voltage (v) c, capacitance (pf) ce v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted ge ies ge gc , ce res gc oes ce gc c ies c oes c res
CPV364M4K fig. 11 - typical switching losses vs. collector-to-emitter current fig. 12 - turn-off soa fig. 13 - maximum forward voltage drop vs. instantaneous forward current 1 10 100 0.8 1.2 1.6 2.0 2.4 fm f instantaneous forward current - i (a) forward voltage drop - v (v) t = 150c t = 125c t = 2 5c j j j 1 10 100 1000 1 10 100 1000 c ce i , colle ctor-to-e m itter cu rrent (a) safe operating area v = 2 0 v t = 125c ge j v , collector-to -em itter voltage (v) a 0 5 10 15 20 25 30 0.0 1.0 2.0 3.0 4.0 i , collector-to-emitter current (a) total switching losses (mj) c r = ohm t = 150 c v = 480v v = 15v g j cc ge 10 w
CPV364M4K fig. 14 - typical reverse recovery vs. di f /dt fig. 15 - typical recovery current vs. di f /dt fig. 16 - typical stored charge vs. di f /dt fig. 17 - typical di (rec)m /dt vs. di f /dt 100 1000 100 1000 f d i /dt - (a/s) di(re c)m /dt - (a/s) i = 5.0a i = 15a i = 30a f f f v = 200v t = 125c t = 25c r j j 0 200 400 600 800 100 1000 f di /d t - (a/s ) rr q - (nc) i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j 1 10 100 100 1000 f di /dt - (a/s) i - (a) irrm i = 5 .0a i = 15 a i = 30a f f f v = 200v t = 125c t = 25c r j j 20 40 60 80 100 100 1000 f di /dt - (a/s) t - (ns) rr i = 30a i = 15a i = 5.0a f f f v = 200v t = 125c t = 25c r j j
CPV364M4K t1 ic vce t1 t2 90% ic 10% vce td(off) tf ic 5% ic t1 +5 s vce ic dt 90% vge +vge eoff = fig. 18b - test waveforms for circuit of fig. 18a, defining e off , t d(off) , t f vce ie dt t2 t1 5% vce ic ipk vcc 10% ic vce t1 t2 dut voltage and current gate voltage d.u.t. +vg 10% +vg 90% ic tr td(on) diode reverse recovery energy tx eon = erec = t4 t3 vd id dt t4 t3 diode recovery waveforms ic vpk 10% vcc irr 10% irr vcc trr q rr = trr tx id dt same type device as d.u.t. d.u.t. 430f 80% of vce fig. 18a - test circuit for measurement of i lm , e on , e off(diode) , t rr , q rr , i rr , t d(on) , t r , t d(off) , t f fig. 18c - test waveforms for circuit of fig. 18a, defining e on , t d(on) , t r fig. 18d - test waveforms for circuit of fig. 18a, defining e rec , t rr , q rr , i rr
CPV364M4K vg gate signal device under test current d.u.t. vol tage in d.u.t. current in d1 t0 t1 t2 d.u.t. v * c 50v l 1000v 6000f 100v figure 19. clamped inductive load test circuit figure 20. pulsed collector current test circuit r l = 480v 4 x i c @25c 0 - 480v figure 18e. macro waveforms for figure 18a's test circuit
CPV364M4K case outline ? ims-2 notes: ? repetitive rating: v ge =20v; pulse width limited by maximum junction temperature (figure 20) ? v cc =80 %( v ces ), v ge =20v, l=10h, r g = 10 w (figure 19) ? pulse width 80s; duty factor 0.1% . ? pulse width 5.0s, single shot. world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 european headquarters: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 7321 victoria park ave., suite 201, markham, ontario l3r 2z8, tel: (905) 475 1897 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 315 outram road, #10-02 tan boon liat building, singapore 0316 tel: 65 221 8371 http://www.irf.com/ data and specifications subject to change without notice. 7/97 d im ens ion s in m illim ete rs and (inc he s) ims-2 package outline (13 pins) 7.87 (.310) 5.46 (.215) 1.27 (.050) 6.10 (.240) 3.05 0.38 (.120 .015) 0.51 (.020) 0.38 (.015) 62.43 (2.458) 53.85 (2.120) 3.91 (.154) 2x 21.97 (.865) 3.94 (.155) 4.06 0.51 (.160 .020) 5.08 (.200) 6x 1.27 (.050) 13x 2.54 (.100) 6x 0.76 (.030) 13x 1 2 3 4 5 6 7 8 9 10 1 1 1 2 13 14 1 5 1 6 17 18 19 notes: 1. tolerance unless otherwise specified 0.254 (.010). 2. controlling d imension: inch. 3. dimensions are shown in millimeter (inches). 4. terminal numbers are shown for refer enc e only.
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